ROHM, a manufacturer of semiconductors and electronic components, has teamed up with Fukushima SiC Applied Engineering Inc., a new venture that aims to drive practical applications for SiC power electronics products and with support from the Japan Science and Technology Agency to announce their joint development of a switch module featuring an onboard SiC MOSFET.
The design of the switch module makes it suitable for high voltage pulse generators as used in devices such as accelerators or plasma generators. The final application is much reduced in size, due to the unique properties of SiC (silicon carbide) to deliver previously unattainable functionality. For example if a high voltage pulse generator is installed into an accelerating electrode, the electrode component, which in previous iterations had to be several hundred meters long, can now be much shorter, so the apparatus itself can be manufactured in a much smaller form.
Fukushima SiC Applied Engineering Inc. is jointly funded by companies such as ROHM and Kyoto Neutronics Co., Ltd. (based in Kyoto City) – a company engaged in the business of applied technologies for neutrons. As part of their activities to support the resurgence of Fukushima through developing applications for cutting edge semiconductor technology such as SiC, the company was established in Fukushima Prefecture. Next year construction on a new plant in Fukushima will be completed. This is the first example in the world of a SiC power device being implemented in a high voltage pulse generator.
A high voltage pulse generator that houses an SiC
The development of this type of high voltage pulse generator means smaller and cheaper accelerators as a neutron source. By creating devices with said accelerators producing many neutrons, there are many applications such as cancer treatments as well as creating radioisotopes for nuclear medicine diagnostics that can potentially benefit from this technology.
The ROHM booth at CEATEC JAPAN 2014 features bare-board circuitry, as well as a mock-up of a 32kV/240A-peak ultra high voltage N channel SiC MOSFET.
ROHM Co., Ltd.
| Booth Location | 6K177 |
|---|
Related URL
- ROHM Co., Ltd.
- http://www.rohm.com/web/global/
